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| Silicon Junction FETs (Small Signal) 2SK3396 Silicon N-Channel Junction FET Unit: mm For impedance conversion in low frequency For infrared sensor Features * Low gate-source cutoff current IGSS * Small capacitance of short-circuit forward transfer capacitance (common source) Ciss , short-circuit output capacitance (common source) Coss , reverse transfer capacitance (common source) Crss 0.33+0.05 -0.02 3 0.10+0.05 -0.02 (0.40) (0.40) 0.800.05 1.200.05 5 0.15 min. 0.23+0.05 -0.02 1 2 0 to 0.01 Parameter Gate-drain voltage (Source open) Gate-source voltage (Drain open) Gate current Drain current Power dissipation Channel temperature Storage temperature Symbol VGDO VGSO IG ID PD Tch Tstg Rating -40 -40 10 1 100 125 -55 to +125 Unit V V mA mA mW C C 1: Source 2: Drain 3: Gate SSSMini3-F1 Package Marking Symbol: EB Electrical Characteristics Ta = 25C 3C Parameter Gate-drain surrender voltage Drain-source cutoff current Gate-source cutoff current Forward transfer admittance Gate-source cutoff voltage Short-circuit forward transfer capacitance (Common source) Short-circuit output capacitance (Common source) Reverse transfer capacitance (Common source) Symbol VGDS IDSS IGSS Yfs VGSC Ciss Coss Crss Conditions IG = -10 A, VDS = 0 VDS = 10 V, VGS = 0 VGS = -20 V, VDS = 0 VDS = 10 V, VGS = 0, f = 1 kHz VDS = 10 V, ID = 1 A VDS = 10 V, VGS = 0, f = 1 MHz VDS = 10 V, VGS = 0, f = 1 MHz VDS = 10 V, VGS = 0, f = 1 MHz 0.05 -1.3 1.0 0.4 0.4 -3.0 Min -40 30 200 - 0.5 Typ Max Unit V A nA mS V pF pF pF Note) Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors. 0.15 max. Absolute Maximum Ratings Ta = 25C 0.520.03 5 0.15 min. 0.800.05 1.200.05 Publication date: July 2003 SJF00036AED 1 2SK3396 PD Ta 120 0.14 0.12 Ta = 25C VGS = 2.5 V 0.08 ID VDS 0.10 VDS = 10 V ID VGS Ta = -25C 100 Power dissipation PD (mW) Drain current ID (mA) 0.10 0.08 0.06 80 2.4 V 2.3 V 2.2 V 2.1 V Drain current ID (mA) 25C 0.06 85C 0.04 60 40 0.04 2.0 V 0.02 0 0 2 4 6 8 10 12 20 0.02 0 0 40 80 120 0 -1.2 -1.0 - 0.8 - 0.6 - 0.4 - 0.2 0 Ambient temperature Ta (C) Drain-source voltage VDS (V) Gate-source voltage VGS (V) Yfs VGS 0.12 0.12 Yfs ID Forward transfer admittance Yfs (mS) VDS = 10 V Ta = 25C 0.10 Forward transfer admittance Yfs (mS) VDS = 10 V Ta = 25C 0.10 0.08 0.08 0.06 0.06 0.04 0.04 0.02 0.02 0 -2.5 -2.0 -1.5 -1.0 - 0.5 0 0 0 20 30 40 50 60 70 80 Gate-source voltage VGS (V) Drain current ID (A) 2 SJF00036AED Request for your special attention and precautions in using the technical information and semiconductors described in this material (1) An export permit needs to be obtained from the competent authorities of the Japanese Government if any of the products or technologies described in this material and controlled under the "Foreign Exchange and Foreign Trade Law" is to be exported or taken out of Japan. (2) The technical information described in this material is limited to showing representative characteristics and applied circuits examples of the products. It neither warrants non-infringement of intellectual property right or any other rights owned by our company or a third party, nor grants any license. (3) We are not liable for the infringement of rights owned by a third party arising out of the use of the product or technologies as described in this material. (4) The products described in this material are intended to be used for standard applications or general electronic equipment (such as office equipment, communications equipment, measuring instruments and household appliances). Consult our sales staff in advance for information on the following applications: * Special applications (such as for airplanes, aerospace, automobiles, traffic control equipment, combustion equipment, life support systems and safety devices) in which exceptional quality and reliability are required, or if the failure or malfunction of the products may directly jeopardize life or harm the human body. * Any applications other than the standard applications intended. (5) The products and product specifications described in this material are subject to change without notice for modification and/or improvement. At the final stage of your design, purchasing, or use of the products, therefore, ask for the most up-to-date Product Standards in advance to make sure that the latest specifications satisfy your requirements. (6) When designing your equipment, comply with the guaranteed values, in particular those of maximum rating, the range of operating power supply voltage, and heat radiation characteristics. Otherwise, we will not be liable for any defect which may arise later in your equipment. Even when the products are used within the guaranteed values, take into the consideration of incidence of break down and failure mode, possible to occur to semiconductor products. Measures on the systems such as redundant design, arresting the spread of fire or preventing glitch are recommended in order to prevent physical injury, fire, social damages, for example, by using the products. (7) When using products for which damp-proof packing is required, observe the conditions (including shelf life and amount of time let standing of unsealed items) agreed upon when specification sheets are individually exchanged. (8) This material may be not reprinted or reproduced whether wholly or partially, without the prior written permission of Matsushita Electric Industrial Co., Ltd. 2002 JUL |
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